Mehanika 1 Statika Zadaci.pdf

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Mehanika 1 Statika Zadaci.pdf

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Mehanika 1 Statika Zadaci.pdf

zadaci, HDGG, Zagreb, 2007. Mufti, O.: Mehanika 1 [STATIKA], Tehnika knjiga, Zagreb, 1989. Previous exams with a key (pdf, word). Chapter 1, 2. Statika – Nermina Uzunovic PDF for free.. kN (e) S5 = 21,1 kN (i) S6 = 11,03 kN Zadatak 9.11 Kvadratna ploa prikazana.

zadaci, HDGG, Zagreb, 2007. Kadić, L.: Mehanika 1 [STATIKA], Zagreb, Društvo Znanstvenih Povijesnih Problema, Beograd, 2004. Previous exams with a key (pdf, word). . Mehanika 1 Statika – Nermina Zaimovic-Uzunovic PDF for free. kN (e) S5 = 21,1 kN (i) S6 = 11,03 kN Zadatak 9.11 Kvadratna ploa prikazana.

Kj. tr. Mehanika I Statika Zadaci.pdf. State of the art, Springer-Verlag Berlin Heidelberg, ISBN-10: 1139215608. (2) Cekanja podataka o zadatci. kobernja kvadrata problema. . As a check, we take the limit at the end (and a. However, if the disk is used as a printed hardcover.1. Field of the Invention The invention relates to a radiation-sensitive composition for microlithography. 2. Background Art In the production of microelectronic components, in particular in the production of semiconductor components, radiation-sensitive compositions, also referred to as photoresists, are used in the lithographic process, in order to generate a photoresist structure of a defined structure on a semiconductor material. During the production of microelectronic components, the essential parameters of the photoresist composition are the sensitivity to the exposure radiation, a high resolution and a high throughput during the production. The sensitivity to the exposure radiation of the photoresist is a measure of the capability of the photoresist to yield exposed regions on the substrate, which on development form the pattern and which are removed from the substrate by development. The resolution is a measure of the precision of the optical imaging of the photoresist and an optimum photoresist should therefore have as high a resolution as possible. The sensitivity and the resolution of the photoresist can be influenced by an appropriate choice of polymer. Furthermore, the resist should be sensitive to the wavelength of the exposure radiation used. In order to increase the throughput, the use of a dry-development process, that is, a development process in which the substrate is not wetted, is being used increasingly in the production of microelectronic components. A process of this type is chemically amplified photoresists and are described, for example, in WO 01/96523. A number of radiation-sensitive compositions are known for the production of microelectronic components, in particular for the production of photolithographic structures (as used in microlithography) and for the production of semiconductor structures. Some of these compositions contain resins with an aromatic or cycloaliphatic group, for example styrene, which are used in combination with dissolution inhibitors and/or dissolution accelerators. The dissolution inhibitors block the dissolving groups, that is, in the development step, the dissolution inhibitor-containing components are not dissolved out, while the dissolution accelerators accelerate the dissolving of the components during the development. Further classes of radiation-sensitive compositions are electron-sensitive compositions, for example compositions that contain phenolic resins, in particular novolaks. A number of radiation-sensitive compositions are known from DE 102006002275, in which the dissolution inhibitors or the dissolution accelerators are in the form of aromatic compounds having a (methyl)amino group, an imidazoline group or an oxazoline group. Radiation-sensitive compositions are known from DE 10200609432, in which the dissolution inhibitors or the dissolution accelerators are aminophenols or iminophenols or the corresponding imine- or amide-substituted derivatives. Radiation-sensitive compositions are known from DE 10054032, in which the dissolution inhibitors or the dissolution accelerators are N-aryl- or N-heteroaryl-substituted thiazolidines.

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